【IPP126N10N3 G】PDF/Datasheet/Manufacturers,electronics components distributor

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Product Information:

RoHS:	Details
Transistor Polarity:	N-Channel
Vds - Drain-Source Breakdown Voltage:	100 V
Vgs - Gate-Source Breakdown Voltage:	20 V
Id - Continuous Drain Current:	58 A
Rds On - Drain-Source Resistance:	12.3 mOhms
Configuration:	Single
Vgs th - Gate-Source Threshold Voltage:
Qg - Gate Charge:
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	94 W
Mounting Style:	Through Hole
Package / Case:	TO-220-3
Packaging:	Tube

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